Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
1.5 A
Maximum Collector Emitter Voltage
80 V
Package Type
TO-126
Mounting Type
Through Hole
Maximum Power Dissipation
12.5 W
Transistor Configuration
Single
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
8.3 x 3.45 x 11.2mm
Produkta apraksts
Small Signal NPN Transistors, 60V to 100V, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,598
Katrs (Paka ir 20) (bez PVN)
€ 0,724
Katrs (Paka ir 20) (Ieskaitot PVN)
Standarts
20
€ 0,598
Katrs (Paka ir 20) (bez PVN)
€ 0,724
Katrs (Paka ir 20) (Ieskaitot PVN)
Standarts
20
Pirkt iepakojumos
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
20 - 80 | € 0,598 | € 11,96 |
100 - 480 | € 0,423 | € 8,46 |
500 - 980 | € 0,345 | € 6,90 |
1000 - 1980 | € 0,28 | € 5,60 |
2000+ | € 0,241 | € 4,82 |
Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
1.5 A
Maximum Collector Emitter Voltage
80 V
Package Type
TO-126
Mounting Type
Through Hole
Maximum Power Dissipation
12.5 W
Transistor Configuration
Single
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
8.3 x 3.45 x 11.2mm
Produkta apraksts
Small Signal NPN Transistors, 60V to 100V, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.