Tehniskie dokumenti
Specifikācija
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
43 A
Maximum Drain Source Voltage
60 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
18 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
52 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
23 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.73mm
Width
6.22mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
2.38mm
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,803
Katrs (Paka ir 5) (bez PVN)
€ 0,972
Katrs (Paka ir 5) (Ieskaitot PVN)
5
€ 0,803
Katrs (Paka ir 5) (bez PVN)
€ 0,972
Katrs (Paka ir 5) (Ieskaitot PVN)
5
Pirkt iepakojumos
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
5 - 5 | € 0,803 | € 4,02 |
10 - 15 | € 0,403 | € 2,02 |
20 - 45 | € 0,385 | € 1,92 |
50 - 95 | € 0,369 | € 1,84 |
100+ | € 0,252 | € 1,26 |
Tehniskie dokumenti
Specifikācija
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
43 A
Maximum Drain Source Voltage
60 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
18 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
52 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
23 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.73mm
Width
6.22mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
2.38mm