Tehniskie dokumenti
Specifikācija
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
150 mA
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
12.8 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.3V
Maximum Power Dissipation
250 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Width
1.5mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
2.9mm
Typical Gate Charge @ Vgs
1.58 nC @ 10 V
Height
1.1mm
PRICED TO CLEAR
Yes
Izcelsmes valsts
China
Produkta apraksts
N-Channel Power MOSFET, 30V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,023
Katrs (Rulli ir 3000) (bez PVN)
€ 0,028
Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
€ 0,023
Katrs (Rulli ir 3000) (bez PVN)
€ 0,028
Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
Tehniskie dokumenti
Specifikācija
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
150 mA
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
12.8 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.3V
Maximum Power Dissipation
250 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Width
1.5mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
2.9mm
Typical Gate Charge @ Vgs
1.58 nC @ 10 V
Height
1.1mm
PRICED TO CLEAR
Yes
Izcelsmes valsts
China
Produkta apraksts