Tehniskie dokumenti
Specifikācija
Brand
MicrochipChannel Type
N
Maximum Continuous Drain Current
130 mA
Maximum Drain Source Voltage
450 V
Package Type
TO-92
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
20 Ω
Channel Mode
Depletion
Maximum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
740 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.2mm
Width
4.19mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
5.33mm
Produkta apraksts
Supertex N-Channel Depletion Mode MOSFET Transistors
The Supertex range of N-channel depletion-mode DMOS FET transistors from Microchip are suited to applications requiring high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.
MOSFET Transistors, Microchip
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,936
Katrs (Paka ir 10) (bez PVN)
€ 1,133
Katrs (Paka ir 10) (Ieskaitot PVN)
10
€ 0,936
Katrs (Paka ir 10) (bez PVN)
€ 1,133
Katrs (Paka ir 10) (Ieskaitot PVN)
10
Pirkt iepakojumos
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
10 - 20 | € 0,936 | € 9,36 |
30 - 90 | € 0,884 | € 8,84 |
100+ | € 0,804 | € 8,04 |
Tehniskie dokumenti
Specifikācija
Brand
MicrochipChannel Type
N
Maximum Continuous Drain Current
130 mA
Maximum Drain Source Voltage
450 V
Package Type
TO-92
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
20 Ω
Channel Mode
Depletion
Maximum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
740 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.2mm
Width
4.19mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
5.33mm
Produkta apraksts
Supertex N-Channel Depletion Mode MOSFET Transistors
The Supertex range of N-channel depletion-mode DMOS FET transistors from Microchip are suited to applications requiring high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.