Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
2.2 A
Maximum Drain Source Voltage
100 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3 + Tab
Maximum Drain Source Resistance
200 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
2.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
3.7mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.7mm
Typical Gate Charge @ Vgs
17 nC @ 10 V
Height
1.8mm
Series
IRFL4310PbF
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,406
Katrs (Rulli ir 2500) (bez PVN)
€ 0,491
Katrs (Rulli ir 2500) (Ieskaitot PVN)
2500
€ 0,406
Katrs (Rulli ir 2500) (bez PVN)
€ 0,491
Katrs (Rulli ir 2500) (Ieskaitot PVN)
2500
Pirkt iepakojumos
Daudzums | Vienības cena | Per Rullis |
---|---|---|
2500 - 2500 | € 0,406 | € 1 015,00 |
5000+ | € 0,384 | € 960,00 |
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
2.2 A
Maximum Drain Source Voltage
100 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3 + Tab
Maximum Drain Source Resistance
200 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
2.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
3.7mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.7mm
Typical Gate Charge @ Vgs
17 nC @ 10 V
Height
1.8mm
Series
IRFL4310PbF
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V