Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
30 V
Package Type
DFN2020
Mounting Type
Surface Mount
Pin Count
7
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.3V
Maximum Power Dissipation
2.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
13 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.1mm
Width
2.1mm
Transistor Material
Si
Series
HEXFET
Minimum Operating Temperature
-55 °C
Height
0.95mm
Produkta apraksts
P-Channel Power MOSFET 30V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,234
Katrs (Paka ir 10) (bez PVN)
€ 0,283
Katrs (Paka ir 10) (Ieskaitot PVN)
10
€ 0,234
Katrs (Paka ir 10) (bez PVN)
€ 0,283
Katrs (Paka ir 10) (Ieskaitot PVN)
10
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
30 V
Package Type
DFN2020
Mounting Type
Surface Mount
Pin Count
7
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.3V
Maximum Power Dissipation
2.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
13 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.1mm
Width
2.1mm
Transistor Material
Si
Series
HEXFET
Minimum Operating Temperature
-55 °C
Height
0.95mm
Produkta apraksts
P-Channel Power MOSFET 30V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.