Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
20 V
Package Type
SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
18.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.55V
Minimum Gate Threshold Voltage
1.65V
Maximum Power Dissipation
2 W
Maximum Gate Source Voltage
±20 V
Width
4mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
15 nC @ 4.5 V
Height
1.5mm
Series
IRF9910
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,724
Katrs (Paka ir 10) (bez PVN)
€ 0,876
Katrs (Paka ir 10) (Ieskaitot PVN)
10
€ 0,724
Katrs (Paka ir 10) (bez PVN)
€ 0,876
Katrs (Paka ir 10) (Ieskaitot PVN)
10
Pirkt iepakojumos
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
10 - 90 | € 0,724 | € 7,24 |
100 - 240 | € 0,572 | € 5,72 |
250 - 490 | € 0,536 | € 5,36 |
500 - 990 | € 0,499 | € 4,99 |
1000+ | € 0,463 | € 4,63 |
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
20 V
Package Type
SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
18.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.55V
Minimum Gate Threshold Voltage
1.65V
Maximum Power Dissipation
2 W
Maximum Gate Source Voltage
±20 V
Width
4mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
15 nC @ 4.5 V
Height
1.5mm
Series
IRF9910
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V