Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N, P
Maximum Continuous Drain Current
3.4 A, 4.7 A
Maximum Drain Source Voltage
55 V
Package Type
SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
0.065 Ω, 0.17 Ω
Channel Mode
Depletion
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2 W
Maximum Gate Source Voltage
20 V
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
2.3 nC @ 10 V, 24 nC @ 10 V
Width
4mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Height
1.5mm
Series
IRF7343PbF
Minimum Operating Temperature
-55 °C
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,455
Katrs (Rulli ir 4000) (bez PVN)
€ 0,551
Katrs (Rulli ir 4000) (Ieskaitot PVN)
4000
€ 0,455
Katrs (Rulli ir 4000) (bez PVN)
€ 0,551
Katrs (Rulli ir 4000) (Ieskaitot PVN)
4000
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N, P
Maximum Continuous Drain Current
3.4 A, 4.7 A
Maximum Drain Source Voltage
55 V
Package Type
SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
0.065 Ω, 0.17 Ω
Channel Mode
Depletion
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2 W
Maximum Gate Source Voltage
20 V
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
2.3 nC @ 10 V, 24 nC @ 10 V
Width
4mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Height
1.5mm
Series
IRF7343PbF
Minimum Operating Temperature
-55 °C