Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
36 A
Maximum Drain Source Voltage
900 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
120 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
417 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.21mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
16.13mm
Typical Gate Charge @ Vgs
270 nC @ 10 V
Height
21.1mm
Series
CoolMOS C3
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
China
Produkta apraksts
Infineon CoolMOS™C3 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 12,50
Katrs (Tubina ir 30) (bez PVN)
€ 15,125
Katrs (Tubina ir 30) (Ieskaitot PVN)
30
€ 12,50
Katrs (Tubina ir 30) (bez PVN)
€ 15,125
Katrs (Tubina ir 30) (Ieskaitot PVN)
30
Pirkt iepakojumos
Daudzums | Vienības cena | Per Penālis |
---|---|---|
30 - 120 | € 12,50 | € 375,00 |
150 - 270 | € 11,00 | € 330,00 |
300+ | € 10,50 | € 315,00 |
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
36 A
Maximum Drain Source Voltage
900 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
120 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
417 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.21mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
16.13mm
Typical Gate Charge @ Vgs
270 nC @ 10 V
Height
21.1mm
Series
CoolMOS C3
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
China
Produkta apraksts
Infineon CoolMOS™C3 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.