Infineon SiC N-Channel MOSFET, 30 A, 600 V, 22-Pin PG-HDSOP-22 IPQC60R017S7XTMA1

RS noliktavas nr.: 284-894PRažotājs: InfineonRažotāja kods: IPQC60R017S7XTMA1
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Specifikācija

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

600 V

Series

600V CoolMOS

Package Type

PG-HDSOP-22

Mounting Type

Surface Mount

Pin Count

22

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

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Noliktavas stāvoklis patreiz nav pieejams

€ 163,00

€ 16,30 Katrs (tiek piegadats Rulli) (bez PVN)

€ 197,23

€ 19,72 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)

Infineon SiC N-Channel MOSFET, 30 A, 600 V, 22-Pin PG-HDSOP-22 IPQC60R017S7XTMA1
Izvēlēties iepakojuma veidu

€ 163,00

€ 16,30 Katrs (tiek piegadats Rulli) (bez PVN)

€ 197,23

€ 19,72 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)

Infineon SiC N-Channel MOSFET, 30 A, 600 V, 22-Pin PG-HDSOP-22 IPQC60R017S7XTMA1
Noliktavas stāvoklis patreiz nav pieejams
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10 - 99€ 16,30
100+€ 15,00

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

600 V

Series

600V CoolMOS

Package Type

PG-HDSOP-22

Mounting Type

Surface Mount

Pin Count

22

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more