Infineon OptiMOS P P-Channel MOSFET, 90 A, 30 V, 3-Pin DPAK IPD90P03P4L04ATMA1
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
90 A
Maximum Drain Source Voltage
30 V
Series
OptiMOS P
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
6.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
137 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +5 V
Typical Gate Charge @ Vgs
125 nC @ 10 V
Width
6.22mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.5mm
Maximum Operating Temperature
+175 °C
Height
2.3mm
Minimum Operating Temperature
-55 °C
Produkta apraksts
Infineon OptiMOS™P P-Channel Power MOSFETs
The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 9,50
€ 1,90 Katrs (Paka ir 5) (bez PVN)
€ 11,50
€ 2,299 Katrs (Paka ir 5) (Ieskaitot PVN)
Standarts
5
€ 9,50
€ 1,90 Katrs (Paka ir 5) (bez PVN)
€ 11,50
€ 2,299 Katrs (Paka ir 5) (Ieskaitot PVN)
Standarts
5
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Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
90 A
Maximum Drain Source Voltage
30 V
Series
OptiMOS P
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
6.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
137 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +5 V
Typical Gate Charge @ Vgs
125 nC @ 10 V
Width
6.22mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.5mm
Maximum Operating Temperature
+175 °C
Height
2.3mm
Minimum Operating Temperature
-55 °C
Produkta apraksts
Infineon OptiMOS™P P-Channel Power MOSFETs
The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products