Infineon FF50R12RT4HOSA1 Dual IGBT, 50 A 1200 V AG-34MM, Chassis Mount
Tehniskie dokumenti
Specifikācija
Brand
InfineonMaximum Continuous Collector Current
50 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
285 W
Number of Transistors
2
Package Type
AG-34MM
Configuration
Dual
Mounting Type
Chassis Mount
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Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 106,00
Katrs (tiek piegadats Penali) (bez PVN)
€ 128,26
Katrs (tiek piegadats Penali) (Ieskaitot PVN)
Industriālais iepakojums (Paplāte)
1
€ 106,00
Katrs (tiek piegadats Penali) (bez PVN)
€ 128,26
Katrs (tiek piegadats Penali) (Ieskaitot PVN)
Industriālais iepakojums (Paplāte)
1
Pirkt iepakojumos
| Daudzums | Vienības cena |
|---|---|
| 1 - 4 | € 106,00 |
| 5 - 9 | € 102,00 |
| 10 - 49 | € 98,00 |
| 50+ | € 96,00 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
InfineonMaximum Continuous Collector Current
50 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
285 W
Number of Transistors
2
Package Type
AG-34MM
Configuration
Dual
Mounting Type
Chassis Mount
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products