Infineon Dual SiC Dual N-Channel MOSFET, 925 A, 3300 V Tray FF2000UXTR33T2M1BPSA1
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
Dual N
Maximum Continuous Drain Current
925 A
Maximum Drain Source Voltage
3300 V
Series
XHP
Package Type
Tray
Mounting Type
Screw Mount
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
Izcelsmes valsts
Germany
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€ 8 870,00
€ 8 870,00 Katrs (bez PVN)
€ 10 732,70
€ 10 732,70 Katrs (Ieskaitot PVN)
1
€ 8 870,00
€ 8 870,00 Katrs (bez PVN)
€ 10 732,70
€ 10 732,70 Katrs (Ieskaitot PVN)
1
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Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
Dual N
Maximum Continuous Drain Current
925 A
Maximum Drain Source Voltage
3300 V
Series
XHP
Package Type
Tray
Mounting Type
Screw Mount
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
Izcelsmes valsts
Germany
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products