Tehniskie dokumenti
Specifikācija
Brand
InfineonTransistor Type
NPN
Maximum DC Collector Current
80 mA
Maximum Collector Emitter Voltage
12 V
Package Type
SOT-323 (SC-70)
Mounting Type
Surface Mount
Maximum Power Dissipation
580 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
20 V
Maximum Emitter Base Voltage
2 V
Maximum Operating Frequency
8 GHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
2 x 1.25 x 0.8mm
Maximum Operating Temperature
+150 °C
Produkta apraksts
RF Bipolar Transistors, Infineon
Bipolar Transistors, Infineon
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,215
Katrs (tiek piegadats Rulli) (bez PVN)
€ 0,26
Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
100
€ 0,215
Katrs (tiek piegadats Rulli) (bez PVN)
€ 0,26
Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
100
Pirkt iepakojumos
Daudzums | Vienības cena | Per Rullis |
---|---|---|
100 - 400 | € 0,215 | € 21,50 |
500 - 900 | € 0,146 | € 14,60 |
1000 - 2400 | € 0,138 | € 13,80 |
2500 - 4900 | € 0,126 | € 12,60 |
5000+ | € 0,119 | € 11,90 |
Tehniskie dokumenti
Specifikācija
Brand
InfineonTransistor Type
NPN
Maximum DC Collector Current
80 mA
Maximum Collector Emitter Voltage
12 V
Package Type
SOT-323 (SC-70)
Mounting Type
Surface Mount
Maximum Power Dissipation
580 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
20 V
Maximum Emitter Base Voltage
2 V
Maximum Operating Frequency
8 GHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
2 x 1.25 x 0.8mm
Maximum Operating Temperature
+150 °C
Produkta apraksts