Fuji 2MBi300VH-120-50 Series IGBT Module, 360 A 1200 V, 7-Pin M276, Screw Mount

RS noliktavas nr.: 747-1099Ražotājs: FujiRažotāja kods: 2MBi300VH-120-50
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Specifikācija

Brand

Fuji

Maximum Continuous Collector Current

360 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

1.6 kW

Package Type

M276

Configuration

Series

Mounting Type

Screw Mount

Channel Type

N

Pin Count

7

Dimensions

108 x 62 x 30.5mm

Maximum Operating Temperature

+150 °C

Produkta apraksts

IGBT Modules 2-Pack, Fuji Electric

IGBT Discretes & Modules, Fuji Electric

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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Fuji 2MBi300VH-120-50 Series IGBT Module, 360 A 1200 V, 7-Pin M276, Screw Mount

P.O.A.

Fuji 2MBi300VH-120-50 Series IGBT Module, 360 A 1200 V, 7-Pin M276, Screw Mount
Noliktavas stāvoklis patreiz nav pieejams

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

Fuji

Maximum Continuous Collector Current

360 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

1.6 kW

Package Type

M276

Configuration

Series

Mounting Type

Screw Mount

Channel Type

N

Pin Count

7

Dimensions

108 x 62 x 30.5mm

Maximum Operating Temperature

+150 °C

Produkta apraksts

IGBT Modules 2-Pack, Fuji Electric

IGBT Discretes & Modules, Fuji Electric

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more