Tehniskie dokumenti
Specifikācija
Brand
Fuji ElectricMaximum Continuous Collector Current
75 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
390 W
Package Type
M633
Configuration
3 Phase Bridge
Mounting Type
PCB Mount
Channel Type
N
Pin Count
35
Transistor Configuration
3 Phase
Dimensions
122 x 62 x 17mm
Maximum Operating Temperature
+150 °C
Izcelsmes valsts
Japan
Produkta apraksts
IGBT Modules 6-Pack, Fuji Electric
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 128,00
Katrs (bez PVN)
€ 154,88
Katrs (Ieskaitot PVN)
1
€ 128,00
Katrs (bez PVN)
€ 154,88
Katrs (Ieskaitot PVN)
1
Pirkt iepakojumos
Daudzums | Vienības cena |
---|---|
1 - 4 | € 128,00 |
5 - 9 | € 115,00 |
10 - 24 | € 110,00 |
25+ | € 106,00 |
Tehniskie dokumenti
Specifikācija
Brand
Fuji ElectricMaximum Continuous Collector Current
75 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
390 W
Package Type
M633
Configuration
3 Phase Bridge
Mounting Type
PCB Mount
Channel Type
N
Pin Count
35
Transistor Configuration
3 Phase
Dimensions
122 x 62 x 17mm
Maximum Operating Temperature
+150 °C
Izcelsmes valsts
Japan
Produkta apraksts
IGBT Modules 6-Pack, Fuji Electric
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.