HMC311LP3E Analog Devices, RF Amplifier MMIC, 14.5 dB 6 GHz, 16-Pin SMT
Tehniskie dokumenti
Specifikācija
Brand
Analog DevicesAmplifier Type
MMIC
Typical Power Gain
14.5 dB
Typical Output Power
15.5dBm
Typical Noise Figure
4.5dB
Number of Channels per Chip
1
Maximum Operating Frequency
6 GHz
Mounting Type
Surface Mount
Package Type
SMT
Pin Count
16
Dimensions
3.1 x 3.1 x 1mm
Height
1mm
Length
3.1mm
Series
Hittite
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+85 °C
Maximum Operating Supply Voltage
5 V
Width
3.1mm
Produkta apraksts
RF Amplifiers, Analog Devices Hittite
Analog Devices Hittite have a series of RF amplifiers that have a range of functions. Some feature low Noise amplifiers, some RF Amplifiers are integrated with resonators, negative resistance devices, varactor diodes, and buffer amplifiers and other offer high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC driver amplifiers.
Radio Frequency (RF) Amplifiers, Analog Devices
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 10,20
Katrs (bez PVN)
€ 12,34
Katrs (Ieskaitot PVN)
Standarts
1
€ 10,20
Katrs (bez PVN)
€ 12,34
Katrs (Ieskaitot PVN)
Standarts
1
Pirkt iepakojumos
| Daudzums | Vienības cena |
|---|---|
| 1 - 1 | € 10,20 |
| 2 - 9 | € 9,90 |
| 10 - 14 | € 9,70 |
| 15 - 24 | € 9,30 |
| 25+ | € 9,10 |
Tehniskie dokumenti
Specifikācija
Brand
Analog DevicesAmplifier Type
MMIC
Typical Power Gain
14.5 dB
Typical Output Power
15.5dBm
Typical Noise Figure
4.5dB
Number of Channels per Chip
1
Maximum Operating Frequency
6 GHz
Mounting Type
Surface Mount
Package Type
SMT
Pin Count
16
Dimensions
3.1 x 3.1 x 1mm
Height
1mm
Length
3.1mm
Series
Hittite
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+85 °C
Maximum Operating Supply Voltage
5 V
Width
3.1mm
Produkta apraksts
RF Amplifiers, Analog Devices Hittite
Analog Devices Hittite have a series of RF amplifiers that have a range of functions. Some feature low Noise amplifiers, some RF Amplifiers are integrated with resonators, negative resistance devices, varactor diodes, and buffer amplifiers and other offer high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC driver amplifiers.