STMicroelectronics N-Channel MOSFET, 2.5 A, 800 V, 8-Pin PowerFLAT 5 x 6 STL4N80K5
Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
800 V
Series
MDmesh K5, SuperMESH5
Package Type
PowerFLAT 5 x 6
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
38 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Width
5.4mm
Number of Elements per Chip
1
Length
6.35mm
Typical Gate Charge @ Vgs
10.5 nC @ 10 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
0.95mm
Produkta apraksts
N-channel MDmesh™ K5 series, SuperMESH5™, STMicroelectronics
MOSFET Transistors, STMicroelectronics
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€ 11,75
€ 2,35 Katrs (tiek piegadats Lente) (bez PVN)
€ 14,22
€ 2,844 Katrs (tiek piegadats Lente) (Ieskaitot PVN)
Standarts
5
€ 11,75
€ 2,35 Katrs (tiek piegadats Lente) (bez PVN)
€ 14,22
€ 2,844 Katrs (tiek piegadats Lente) (Ieskaitot PVN)
Standarts
5
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
| Daudzums | Vienības cena | Per Lente |
|---|---|---|
| 5 - 20 | € 2,35 | € 11,75 |
| 25 - 45 | € 2,25 | € 11,25 |
| 50 - 120 | € 2,05 | € 10,25 |
| 125 - 245 | € 1,80 | € 9,00 |
| 250+ | € 1,75 | € 8,75 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
800 V
Series
MDmesh K5, SuperMESH5
Package Type
PowerFLAT 5 x 6
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
38 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Width
5.4mm
Number of Elements per Chip
1
Length
6.35mm
Typical Gate Charge @ Vgs
10.5 nC @ 10 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
0.95mm
Produkta apraksts
N-channel MDmesh™ K5 series, SuperMESH5™, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products