Wolfspeed SiC N-Channel MOSFET, 5 A, 1700 V, 3-Pin TO-247 C2M1000170D
Tehniskie dokumenti
Specifikācija
Brand
WolfspeedChannel Type
N
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
1700 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.4 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.1V
Minimum Gate Threshold Voltage
2.4V
Maximum Power Dissipation
69 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-5 V, +20 V
Width
5.21mm
Transistor Material
SiC
Number of Elements per Chip
1
Length
16.13mm
Typical Gate Charge @ Vgs
13 nC @ 20 V, 13 nC @ 5 V
Maximum Operating Temperature
+150 °C
Height
21.1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
3.8V
Izcelsmes valsts
China
Produkta apraksts
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.
MOSFET Transistors, Wolfspeed
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€ 57,00
€ 11,40 Katrs (tiek piegadats Tubina) (bez PVN)
€ 68,97
€ 13,79 Katrs (tiek piegadats Tubina) (Ieskaitot PVN)
Industriālais iepakojums (Penālis)
5
€ 57,00
€ 11,40 Katrs (tiek piegadats Tubina) (bez PVN)
€ 68,97
€ 13,79 Katrs (tiek piegadats Tubina) (Ieskaitot PVN)
Industriālais iepakojums (Penālis)
5
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
| Daudzums | Vienības cena |
|---|---|
| 5 - 9 | € 11,40 |
| 10 - 29 | € 11,20 |
| 30 - 89 | € 10,90 |
| 90+ | € 10,60 |
Ideate. Create. Collaborate
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Tehniskie dokumenti
Specifikācija
Brand
WolfspeedChannel Type
N
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
1700 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.4 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.1V
Minimum Gate Threshold Voltage
2.4V
Maximum Power Dissipation
69 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-5 V, +20 V
Width
5.21mm
Transistor Material
SiC
Number of Elements per Chip
1
Length
16.13mm
Typical Gate Charge @ Vgs
13 nC @ 20 V, 13 nC @ 5 V
Maximum Operating Temperature
+150 °C
Height
21.1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
3.8V
Izcelsmes valsts
China
Produkta apraksts
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.
MOSFET Transistors, Wolfspeed
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products