Wolfspeed SiC N-Channel MOSFET, 60 A, 1200 V, 3-Pin TO-247 C2M0040120D
Tehniskie dokumenti
Specifikācija
Brand
WolfspeedChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
1200 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
52 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
330 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-5 V, +20 V
Number of Elements per Chip
1
Width
5.21mm
Length
16.13mm
Typical Gate Charge @ Vgs
115 nC @ 20 V, 115 nC @ 5 V
Transistor Material
SiC
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
3.3V
Height
21.1mm
Izcelsmes valsts
China
Produkta apraksts
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.
MOSFET Transistors, Wolfspeed
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€ 1 467,00
€ 48,90 Katrs (Tubina ir 30) (bez PVN)
€ 1 775,07
€ 59,169 Katrs (Tubina ir 30) (Ieskaitot PVN)
30
€ 1 467,00
€ 48,90 Katrs (Tubina ir 30) (bez PVN)
€ 1 775,07
€ 59,169 Katrs (Tubina ir 30) (Ieskaitot PVN)
30
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Ideate. Create. Collaborate
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Tehniskie dokumenti
Specifikācija
Brand
WolfspeedChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
1200 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
52 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
330 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-5 V, +20 V
Number of Elements per Chip
1
Width
5.21mm
Length
16.13mm
Typical Gate Charge @ Vgs
115 nC @ 20 V, 115 nC @ 5 V
Transistor Material
SiC
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
3.3V
Height
21.1mm
Izcelsmes valsts
China
Produkta apraksts
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.
MOSFET Transistors, Wolfspeed
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products