Tehniskie dokumenti
Specifikācija
Brand
VishayMounting Type
Surface Mount
Package Type
DO-221AC
Maximum Continuous Forward Current
3A
Peak Reverse Repetitive Voltage
200V
Diode Configuration
Single
Rectifier Type
General Purpose
Diode Type
Fast Recovery Epitaxial Diode
Pin Count
2
Maximum Forward Voltage Drop
930mV
Number of Elements per Chip
1
Diode Technology
Silicon Junction
Peak Reverse Recovery Time
30ns
Peak Non-Repetitive Forward Surge Current
85A
Izcelsmes valsts
China
Produkta apraksts
FRED Pt® Hyperfast Recovery Rectifiers
The FRED Pt® (Fast Recovery Epitaxial Diode) range of products from Vishay are hyperfast diodes containing platinum (Pt) doping technology. This series offers extremely low leakage currents at high temperatures together with a high maximum junction operating temperature of 175°C. Typical recovery times are 35nds or less.
Diodes and Rectifiers, Vishay Semiconductor
€ 13,80
€ 0,276 Katrs (Paka ir 50) (bez PVN)
€ 16,70
€ 0,334 Katrs (Paka ir 50) (Ieskaitot PVN)
Standarts
50
€ 13,80
€ 0,276 Katrs (Paka ir 50) (bez PVN)
€ 16,70
€ 0,334 Katrs (Paka ir 50) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
Standarts
50
Noliktavas stāvoklis patreiz nav pieejams
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
50 - 200 | € 0,276 | € 13,80 |
250 - 450 | € 0,248 | € 12,40 |
500 - 1200 | € 0,234 | € 11,70 |
1250 - 2450 | € 0,226 | € 11,30 |
2500+ | € 0,22 | € 11,00 |
Tehniskie dokumenti
Specifikācija
Brand
VishayMounting Type
Surface Mount
Package Type
DO-221AC
Maximum Continuous Forward Current
3A
Peak Reverse Repetitive Voltage
200V
Diode Configuration
Single
Rectifier Type
General Purpose
Diode Type
Fast Recovery Epitaxial Diode
Pin Count
2
Maximum Forward Voltage Drop
930mV
Number of Elements per Chip
1
Diode Technology
Silicon Junction
Peak Reverse Recovery Time
30ns
Peak Non-Repetitive Forward Surge Current
85A
Izcelsmes valsts
China
Produkta apraksts
FRED Pt® Hyperfast Recovery Rectifiers
The FRED Pt® (Fast Recovery Epitaxial Diode) range of products from Vishay are hyperfast diodes containing platinum (Pt) doping technology. This series offers extremely low leakage currents at high temperatures together with a high maximum junction operating temperature of 175°C. Typical recovery times are 35nds or less.