Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
200 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
40 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
10.67mm
Typical Gate Charge @ Vgs
22 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
9.65mm
Transistor Material
Si
Number of Elements per Chip
1
Height
4.83mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
China
Produkta apraksts
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 8,51
€ 0,851 Katrs (Paka ir 10) (bez PVN)
€ 10,30
€ 1,03 Katrs (Paka ir 10) (Ieskaitot PVN)
Standarts
10
€ 8,51
€ 0,851 Katrs (Paka ir 10) (bez PVN)
€ 10,30
€ 1,03 Katrs (Paka ir 10) (Ieskaitot PVN)
Standarts
10
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
10 - 90 | € 0,851 | € 8,51 |
100 - 240 | € 0,64 | € 6,40 |
250 - 490 | € 0,529 | € 5,29 |
500 - 990 | € 0,469 | € 4,69 |
1000+ | € 0,446 | € 4,46 |
Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
200 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
40 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
10.67mm
Typical Gate Charge @ Vgs
22 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
9.65mm
Transistor Material
Si
Number of Elements per Chip
1
Height
4.83mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
China
Produkta apraksts