Vishay E N-Channel MOSFET, 15 A, 800 V, 3-Pin D2PAK SIHB17N80AE-GE3

RS noliktavas nr.: 210-4971Ražotājs: VishayRažotāja kods: SIHB17N80AE-GE3
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Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

15 A

Maximum Drain Source Voltage

800 V

Series

E

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.25 Ω

Maximum Gate Threshold Voltage

2 → 4V

Number of Elements per Chip

1

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Noliktavas stāvoklis patreiz nav pieejams

€ 95,00

€ 1,90 Katrs (Tubina ir 50) (bez PVN)

€ 114,95

€ 2,299 Katrs (Tubina ir 50) (Ieskaitot PVN)

Vishay E N-Channel MOSFET, 15 A, 800 V, 3-Pin D2PAK SIHB17N80AE-GE3

€ 95,00

€ 1,90 Katrs (Tubina ir 50) (bez PVN)

€ 114,95

€ 2,299 Katrs (Tubina ir 50) (Ieskaitot PVN)

Vishay E N-Channel MOSFET, 15 A, 800 V, 3-Pin D2PAK SIHB17N80AE-GE3
Noliktavas stāvoklis patreiz nav pieejams

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

DaudzumsVienības cenaPer Penālis
50 - 50€ 1,90€ 95,00
100 - 200€ 1,65€ 82,50
250+€ 1,40€ 70,00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

15 A

Maximum Drain Source Voltage

800 V

Series

E

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.25 Ω

Maximum Gate Threshold Voltage

2 → 4V

Number of Elements per Chip

1

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more