Vishay ThunderFET N-Channel MOSFET, 11.3 A, 100 V, 6-Pin PowerPAK SC-70 SIA416DJ-T1-GE3
Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
11.3 A
Maximum Drain Source Voltage
100 V
Series
ThunderFET
Package Type
PowerPAK SC-70
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
130 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.6V
Maximum Power Dissipation
19 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
2.15mm
Typical Gate Charge @ Vgs
6.5 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
2.15mm
Transistor Material
Si
Height
0.75mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
China
Produkta apraksts
N-Channel MOSFET, Medium Voltage/ThunderFET®, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 5,18
€ 0,259 Katrs (Paka ir 20) (bez PVN)
€ 6,27
€ 0,313 Katrs (Paka ir 20) (Ieskaitot PVN)
Standarts
20
€ 5,18
€ 0,259 Katrs (Paka ir 20) (bez PVN)
€ 6,27
€ 0,313 Katrs (Paka ir 20) (Ieskaitot PVN)
Standarts
20
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
11.3 A
Maximum Drain Source Voltage
100 V
Series
ThunderFET
Package Type
PowerPAK SC-70
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
130 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.6V
Maximum Power Dissipation
19 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
2.15mm
Typical Gate Charge @ Vgs
6.5 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
2.15mm
Transistor Material
Si
Height
0.75mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
China
Produkta apraksts
N-Channel MOSFET, Medium Voltage/ThunderFET®, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products