Vishay P-Channel MOSFET, 11.5 A, 30 V, 8-Pin PowerPAK 1212-8 SI7129DN-T1-GE3
Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
11.5 A
Maximum Drain Source Voltage
30 V
Package Type
PowerPAK 1212-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
52.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.15mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.15mm
Typical Gate Charge @ Vgs
47.5 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.07mm
Minimum Operating Temperature
-50 °C
Izcelsmes valsts
China
Produkta apraksts
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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€ 72,70
€ 0,727 Katrs (tiek piegadats Rulli) (bez PVN)
€ 87,97
€ 0,88 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
100
€ 72,70
€ 0,727 Katrs (tiek piegadats Rulli) (bez PVN)
€ 87,97
€ 0,88 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
100
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
| Daudzums | Vienības cena | Per Rullis |
|---|---|---|
| 100 - 180 | € 0,727 | € 14,54 |
| 200 - 480 | € 0,696 | € 13,92 |
| 500 - 980 | € 0,619 | € 12,38 |
| 1000+ | € 0,58 | € 11,60 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
11.5 A
Maximum Drain Source Voltage
30 V
Package Type
PowerPAK 1212-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
52.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.15mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.15mm
Typical Gate Charge @ Vgs
47.5 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.07mm
Minimum Operating Temperature
-50 °C
Izcelsmes valsts
China
Produkta apraksts
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products