Vishay TrenchFET Dual N/P-Channel MOSFET, 4 A, 20 V, 8-Pin 1206 ChipFET SI5515CDC-T1-GE3

RS noliktavas nr.: 180-7304Ražotājs: VishayRažotāja kods: SI5515CDC-T1-GE3
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Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

N, P

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

20 V

Series

TrenchFET

Package Type

1206 ChipFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.05 O,0.156 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.8V

Number of Elements per Chip

2

Izcelsmes valsts

China

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Noliktavas stāvoklis patreiz nav pieejams

€ 873,00

€ 0,291 Katrs (Rulli ir 3000) (bez PVN)

€ 1 056,33

€ 0,352 Katrs (Rulli ir 3000) (Ieskaitot PVN)

Vishay TrenchFET Dual N/P-Channel MOSFET, 4 A, 20 V, 8-Pin 1206 ChipFET SI5515CDC-T1-GE3

€ 873,00

€ 0,291 Katrs (Rulli ir 3000) (bez PVN)

€ 1 056,33

€ 0,352 Katrs (Rulli ir 3000) (Ieskaitot PVN)

Vishay TrenchFET Dual N/P-Channel MOSFET, 4 A, 20 V, 8-Pin 1206 ChipFET SI5515CDC-T1-GE3
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Noliktavas stāvoklis patreiz nav pieejams

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Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

N, P

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

20 V

Series

TrenchFET

Package Type

1206 ChipFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.05 O,0.156 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.8V

Number of Elements per Chip

2

Izcelsmes valsts

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more