Vishay TrenchFET P-Channel MOSFET, 19.7 A, 30 V, 8-Pin SO-8 SI4425DDY-T1-GE3

RS noliktavas nr.: 180-8062Ražotājs: VishayRažotāja kods: SI4425DDY-T1-GE3
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Specifikācija

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

19.7 A

Maximum Drain Source Voltage

30 V

Series

TrenchFET

Package Type

SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.0165 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Number of Elements per Chip

1

Izcelsmes valsts

China

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€ 5,36

€ 0,268 Katrs (Paka ir 20) (bez PVN)

€ 6,49

€ 0,324 Katrs (Paka ir 20) (Ieskaitot PVN)

Vishay TrenchFET P-Channel MOSFET, 19.7 A, 30 V, 8-Pin SO-8 SI4425DDY-T1-GE3
Izvēlēties iepakojuma veidu

€ 5,36

€ 0,268 Katrs (Paka ir 20) (bez PVN)

€ 6,49

€ 0,324 Katrs (Paka ir 20) (Ieskaitot PVN)

Vishay TrenchFET P-Channel MOSFET, 19.7 A, 30 V, 8-Pin SO-8 SI4425DDY-T1-GE3

Noliktavas stāvoklis patreiz nav pieejams

Izvēlēties iepakojuma veidu

Noliktavas stāvoklis patreiz nav pieejams

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

19.7 A

Maximum Drain Source Voltage

30 V

Series

TrenchFET

Package Type

SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.0165 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Number of Elements per Chip

1

Izcelsmes valsts

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more