Vishay N-Channel MOSFET, 13.6 A, 30 V, 8-Pin SOIC SI4162DY-T1-GE3

RS noliktavas nr.: 710-3323PRažotājs: VishayRažotāja kods: SI4162DY-T1-GE3
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Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

13.6 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

8 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

20 nC @ 10 V, 8.8 nC @ 4.5 V

Width

4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5mm

Maximum Operating Temperature

+150 °C

Height

1.5mm

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

China

Produkta apraksts

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Noliktavas stāvoklis patreiz nav pieejams

€ 62,50

€ 1,25 Katrs (tiek piegadats Rulli) (bez PVN)

€ 75,62

€ 1,512 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)

Vishay N-Channel MOSFET, 13.6 A, 30 V, 8-Pin SOIC SI4162DY-T1-GE3
Izvēlēties iepakojuma veidu

€ 62,50

€ 1,25 Katrs (tiek piegadats Rulli) (bez PVN)

€ 75,62

€ 1,512 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)

Vishay N-Channel MOSFET, 13.6 A, 30 V, 8-Pin SOIC SI4162DY-T1-GE3
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

DaudzumsVienības cenaPer Rullis
50 - 245€ 1,25€ 6,25
250 - 495€ 1,15€ 5,75
500 - 1245€ 1,10€ 5,50
1250+€ 1,00€ 5,00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Jūs varētu interesēt
N-Channel MOSFET Transistor, 9.5 A, 30 V, 8-Pin SOIC Vishay SI4886DY-T1-E3
P.O.A.Katrs (tiek piegadats Rulli) (bez PVN)

Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

13.6 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

8 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

20 nC @ 10 V, 8.8 nC @ 4.5 V

Width

4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5mm

Maximum Operating Temperature

+150 °C

Height

1.5mm

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

China

Produkta apraksts

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Jūs varētu interesēt
N-Channel MOSFET Transistor, 9.5 A, 30 V, 8-Pin SOIC Vishay SI4886DY-T1-E3
P.O.A.Katrs (tiek piegadats Rulli) (bez PVN)