Vishay N-Channel MOSFET, 13.6 A, 30 V, 8-Pin SOIC SI4162DY-T1-GE3

RS noliktavas nr.: 710-3323Ražotājs: VishayRažotāja kods: SI4162DY-T1-GE3
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Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

13.6 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

8 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

20 nC @ 10 V, 8.8 nC @ 4.5 V

Width

4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5mm

Maximum Operating Temperature

+150 °C

Height

1.5mm

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

China

Produkta apraksts

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Noliktavas stāvoklis patreiz nav pieejams

€ 3,58

€ 0,717 Katrs (Paka ir 5) (bez PVN)

€ 4,33

€ 0,868 Katrs (Paka ir 5) (Ieskaitot PVN)

Vishay N-Channel MOSFET, 13.6 A, 30 V, 8-Pin SOIC SI4162DY-T1-GE3
Izvēlēties iepakojuma veidu

€ 3,58

€ 0,717 Katrs (Paka ir 5) (bez PVN)

€ 4,33

€ 0,868 Katrs (Paka ir 5) (Ieskaitot PVN)

Vishay N-Channel MOSFET, 13.6 A, 30 V, 8-Pin SOIC SI4162DY-T1-GE3
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

DaudzumsVienības cenaPer Iepakojums
5 - 45€ 0,717€ 3,58
50 - 245€ 0,676€ 3,38
250 - 495€ 0,611€ 3,06
500 - 1245€ 0,574€ 2,87
1250+€ 0,539€ 2,70

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

13.6 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

8 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

20 nC @ 10 V, 8.8 nC @ 4.5 V

Width

4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5mm

Maximum Operating Temperature

+150 °C

Height

1.5mm

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

China

Produkta apraksts

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more