Vishay N-Channel MOSFET, 20 A, 40 V, 8-Pin SOIC SI4124DY-T1-GE3

RS noliktavas nr.: 812-3195Ražotājs: VishayRažotāja kods: SI4124DY-T1-GE3
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Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

40 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

9 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

5.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

5mm

Transistor Material

Si

Width

4mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

51 nC @ 10 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1.55mm

Izcelsmes valsts

China

Produkta apraksts

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Noliktavas stāvoklis patreiz nav pieejams

€ 15,00

€ 1,50 Katrs (Paka ir 10) (bez PVN)

€ 18,15

€ 1,815 Katrs (Paka ir 10) (Ieskaitot PVN)

Vishay N-Channel MOSFET, 20 A, 40 V, 8-Pin SOIC SI4124DY-T1-GE3
Izvēlēties iepakojuma veidu

€ 15,00

€ 1,50 Katrs (Paka ir 10) (bez PVN)

€ 18,15

€ 1,815 Katrs (Paka ir 10) (Ieskaitot PVN)

Vishay N-Channel MOSFET, 20 A, 40 V, 8-Pin SOIC SI4124DY-T1-GE3
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

DaudzumsVienības cenaPer Iepakojums
10 - 40€ 1,50€ 15,00
50 - 90€ 1,40€ 14,00
100 - 240€ 1,30€ 13,00
250 - 490€ 1,20€ 12,00
500+€ 1,15€ 11,50

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Jūs varētu interesēt

Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

40 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

9 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

5.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

5mm

Transistor Material

Si

Width

4mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

51 nC @ 10 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1.55mm

Izcelsmes valsts

China

Produkta apraksts

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Jūs varētu interesēt