Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
40 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
5.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
5mm
Transistor Material
Si
Width
4mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
51 nC @ 10 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
1.55mm
Izcelsmes valsts
China
Produkta apraksts
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 15,00
€ 1,50 Katrs (Paka ir 10) (bez PVN)
€ 18,15
€ 1,815 Katrs (Paka ir 10) (Ieskaitot PVN)
Standarts
10
€ 15,00
€ 1,50 Katrs (Paka ir 10) (bez PVN)
€ 18,15
€ 1,815 Katrs (Paka ir 10) (Ieskaitot PVN)
Standarts
10
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
10 - 40 | € 1,50 | € 15,00 |
50 - 90 | € 1,40 | € 14,00 |
100 - 240 | € 1,30 | € 13,00 |
250 - 490 | € 1,20 | € 12,00 |
500+ | € 1,15 | € 11,50 |
Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
40 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
5.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
5mm
Transistor Material
Si
Width
4mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
51 nC @ 10 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
1.55mm
Izcelsmes valsts
China
Produkta apraksts