Vishay N-Channel MOSFET, 3.6 A, 30 V, 3-Pin SOT-23 SI2304DDS-T1-GE3

RS noliktavas nr.: 812-3117PRažotājs: VishayRažotāja kods: SI2304DDS-T1-GE3
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Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

3.6 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

75 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

1.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3.04mm

Typical Gate Charge @ Vgs

4.5 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.02mm

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

China

Produkta apraksts

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Noliktavas stāvoklis patreiz nav pieejams

€ 83,50

€ 0,167 Katrs (tiek piegadats Rulli) (bez PVN)

€ 101,04

€ 0,202 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)

Vishay N-Channel MOSFET, 3.6 A, 30 V, 3-Pin SOT-23 SI2304DDS-T1-GE3
Izvēlēties iepakojuma veidu

€ 83,50

€ 0,167 Katrs (tiek piegadats Rulli) (bez PVN)

€ 101,04

€ 0,202 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)

Vishay N-Channel MOSFET, 3.6 A, 30 V, 3-Pin SOT-23 SI2304DDS-T1-GE3
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

DaudzumsVienības cenaPer Rullis
500 - 1200€ 0,167€ 8,35
1250 - 2450€ 0,131€ 6,55
2500 - 4950€ 0,12€ 6,00
5000+€ 0,107€ 5,35

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Jūs varētu interesēt
N-Channel MOSFET Transistor, 2.6 A, 30 V, 3-Pin SOT-23 Vishay SI2304BDS-T1-E3
P.O.A.Katrs (tiek piegadats Rulli) (bez PVN)
N-Channel MOSFET Transistor, 3.1 A, 30 V, 3-Pin SOT-23 Vishay SI2306BDS-T1-E3
P.O.A.Katrs (tiek piegadats Rulli) (bez PVN)

Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

3.6 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

75 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

1.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3.04mm

Typical Gate Charge @ Vgs

4.5 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.02mm

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

China

Produkta apraksts

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Jūs varētu interesēt
N-Channel MOSFET Transistor, 2.6 A, 30 V, 3-Pin SOT-23 Vishay SI2304BDS-T1-E3
P.O.A.Katrs (tiek piegadats Rulli) (bez PVN)
N-Channel MOSFET Transistor, 3.1 A, 30 V, 3-Pin SOT-23 Vishay SI2306BDS-T1-E3
P.O.A.Katrs (tiek piegadats Rulli) (bez PVN)