Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
630 mA
Maximum Drain Source Voltage
20 V
Package Type
SC-75
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.1 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
240 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Width
0.86mm
Transistor Material
Si
Typical Gate Charge @ Vgs
1.3 nC @ 8 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Length
1.68mm
Height
0.8mm
Minimum Operating Temperature
-55 °C
Produkta apraksts
N-Channel MOSFET, 8V to 25V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 2,92
€ 0,146 Katrs (tiek piegadats Lente) (bez PVN)
€ 3,53
€ 0,177 Katrs (tiek piegadats Lente) (Ieskaitot PVN)
Standarts
20
€ 2,92
€ 0,146 Katrs (tiek piegadats Lente) (bez PVN)
€ 3,53
€ 0,177 Katrs (tiek piegadats Lente) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
Standarts
20
Noliktavas stāvoklis patreiz nav pieejams
Daudzums | Vienības cena | Per Lente |
---|---|---|
20 - 180 | € 0,146 | € 2,92 |
200 - 480 | € 0,101 | € 2,02 |
500 - 980 | € 0,091 | € 1,82 |
1000 - 1980 | € 0,079 | € 1,58 |
2000+ | € 0,078 | € 1,56 |
Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
630 mA
Maximum Drain Source Voltage
20 V
Package Type
SC-75
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.1 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
240 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Width
0.86mm
Transistor Material
Si
Typical Gate Charge @ Vgs
1.3 nC @ 8 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Length
1.68mm
Height
0.8mm
Minimum Operating Temperature
-55 °C
Produkta apraksts