Vishay N-Channel MOSFET, 10 A, 400 V, 3-Pin TO-220AB IRF740PBF

RS noliktavas nr.: 541-0020Ražotājs: VishayRažotāja kods: IRF740PBF
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Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

400 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

550 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

63 nC @ 10 V

Width

4.7mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.41mm

Maximum Operating Temperature

+150 °C

Height

9.01mm

Minimum Operating Temperature

-55 °C

Produkta apraksts

N-Channel MOSFET, 300V to 400V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Noliktavas stāvoklis patreiz nav pieejams

€ 2,20

€ 2,20 Katrs (bez PVN)

€ 2,66

€ 2,66 Katrs (Ieskaitot PVN)

Vishay N-Channel MOSFET, 10 A, 400 V, 3-Pin TO-220AB IRF740PBF

€ 2,20

€ 2,20 Katrs (bez PVN)

€ 2,66

€ 2,66 Katrs (Ieskaitot PVN)

Vishay N-Channel MOSFET, 10 A, 400 V, 3-Pin TO-220AB IRF740PBF
Noliktavas stāvoklis patreiz nav pieejams

Noliktavas stāvoklis patreiz nav pieejams

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DaudzumsVienības cena
1 - 9€ 2,20
10 - 49€ 1,95
50 - 99€ 1,85
100 - 249€ 1,75
250+€ 1,60

Ideate. Create. Collaborate

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No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Jūs varētu interesēt
N-channel MOSFET,IRF740 10A 400V 50pcs
P.O.A.1 tubina no 50 (bez PVN)
N-channel MOSFET,IRF740 10A 400V
P.O.A.Katrs (bez PVN)

Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

400 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

550 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

63 nC @ 10 V

Width

4.7mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.41mm

Maximum Operating Temperature

+150 °C

Height

9.01mm

Minimum Operating Temperature

-55 °C

Produkta apraksts

N-Channel MOSFET, 300V to 400V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Jūs varētu interesēt
N-channel MOSFET,IRF740 10A 400V 50pcs
P.O.A.1 tubina no 50 (bez PVN)
N-channel MOSFET,IRF740 10A 400V
P.O.A.Katrs (bez PVN)