Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
5.2 A
Maximum Drain Source Voltage
200 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
800 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
50 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
4.7mm
Length
10.41mm
Typical Gate Charge @ Vgs
14 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
9.01mm
Produkta apraksts
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 26,45
€ 0,529 Katrs (Tubina ir 50) (bez PVN)
€ 32,00
€ 0,64 Katrs (Tubina ir 50) (Ieskaitot PVN)
50
€ 26,45
€ 0,529 Katrs (Tubina ir 50) (bez PVN)
€ 32,00
€ 0,64 Katrs (Tubina ir 50) (Ieskaitot PVN)
50
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Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
5.2 A
Maximum Drain Source Voltage
200 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
800 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
50 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
4.7mm
Length
10.41mm
Typical Gate Charge @ Vgs
14 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
9.01mm
Produkta apraksts