Tehniskie dokumenti
Specifikācija
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
60 V
Series
TrenchFET
Package Type
SC-70-6L
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
19 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Length
2.2mm
Number of Elements per Chip
1
Width
1.35mm
Typical Gate Charge @ Vgs
8.9 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Height
1mm
Forward Diode Voltage
1.2V
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
China
€ 1 068,00
€ 0,356 Katrs (Rulli ir 3000) (bez PVN)
€ 1 292,28
€ 0,431 Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
€ 1 068,00
€ 0,356 Katrs (Rulli ir 3000) (bez PVN)
€ 1 292,28
€ 0,431 Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
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Tehniskie dokumenti
Specifikācija
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
60 V
Series
TrenchFET
Package Type
SC-70-6L
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
19 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Length
2.2mm
Number of Elements per Chip
1
Width
1.35mm
Typical Gate Charge @ Vgs
8.9 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Height
1mm
Forward Diode Voltage
1.2V
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
China