Tehniskie dokumenti
Specifikācija
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
21 A
Maximum Drain Source Voltage
100 V
Package Type
TSON
Series
U-MOSVIII-H
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
33 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
27 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
3.1mm
Length
3.1mm
Typical Gate Charge @ Vgs
11 nC @ 10 V
Forward Diode Voltage
1.2V
Height
0.85mm
Izcelsmes valsts
Japan
Produkta apraksts
MOSFET Transistors, Toshiba
€ 7,92
€ 0,396 Katrs (Paka ir 20) (bez PVN)
€ 9,58
€ 0,479 Katrs (Paka ir 20) (Ieskaitot PVN)
20
€ 7,92
€ 0,396 Katrs (Paka ir 20) (bez PVN)
€ 9,58
€ 0,479 Katrs (Paka ir 20) (Ieskaitot PVN)
20
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Tehniskie dokumenti
Specifikācija
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
21 A
Maximum Drain Source Voltage
100 V
Package Type
TSON
Series
U-MOSVIII-H
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
33 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
27 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
3.1mm
Length
3.1mm
Typical Gate Charge @ Vgs
11 nC @ 10 V
Forward Diode Voltage
1.2V
Height
0.85mm
Izcelsmes valsts
Japan
Produkta apraksts