Toshiba TK N-Channel MOSFET, 58 A, 60 V, 3-Pin TO-220SIS TK58A06N1,S4X(S

RS noliktavas nr.: 827-6249Ražotājs: ToshibaRažotāja kods: TK58A06N1,S4X(S
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Specifikācija

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

58 A

Maximum Drain Source Voltage

60 V

Series

TK

Package Type

TO-220SIS

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

5.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

35 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.5mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10mm

Typical Gate Charge @ Vgs

46 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

15mm

Izcelsmes valsts

China

Produkta apraksts

MOSFET Transistors, Toshiba

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Noliktavas stāvoklis patreiz nav pieejams

€ 7,80

€ 1,30 Katrs (Paka ir 6) (bez PVN)

€ 9,44

€ 1,573 Katrs (Paka ir 6) (Ieskaitot PVN)

Toshiba TK N-Channel MOSFET, 58 A, 60 V, 3-Pin TO-220SIS TK58A06N1,S4X(S
Izvēlēties iepakojuma veidu

Standarts

Izvēlēties iepakojuma veidu

Standarts - each

Pieejams komplektos pa 6.

Ražošana -

Pieejams komplektos pa 6.

Ieteicams pasūtot lielos daudzumos. Preces ir iepakotas gatavas ievietošanai iekārtās, kas ļauj uzlabot ražošanas efektivitāti.

6

Pieejams komplektos pa 6
6€ 7,80
12€ 15,60
18€ 23,40
24€ 31,20
30€ 39,00
36€ 46,80
42€ 54,60
48€ 62,40
54€ 70,20
60€ 78,00
66€ 85,80
72€ 93,60
78€ 101,40
84€ 109,20
90€ 117,00

€ 7,80

€ 1,30 Katrs (Paka ir 6) (bez PVN)

€ 9,44

€ 1,573 Katrs (Paka ir 6) (Ieskaitot PVN)

Toshiba TK N-Channel MOSFET, 58 A, 60 V, 3-Pin TO-220SIS TK58A06N1,S4X(S
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Standarts

Izvēlēties iepakojuma veidu

Standarts - each

Pieejams komplektos pa 6.

Ražošana -

Pieejams komplektos pa 6.

Ieteicams pasūtot lielos daudzumos. Preces ir iepakotas gatavas ievietošanai iekārtās, kas ļauj uzlabot ražošanas efektivitāti.

6

Pieejams komplektos pa 6
6€ 7,80
12€ 15,60
18€ 23,40
24€ 31,20
30€ 39,00
36€ 46,80
42€ 54,60
48€ 62,40
54€ 70,20
60€ 78,00
66€ 85,80
72€ 93,60
78€ 101,40
84€ 109,20
90€ 117,00

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

58 A

Maximum Drain Source Voltage

60 V

Series

TK

Package Type

TO-220SIS

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

5.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

35 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.5mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10mm

Typical Gate Charge @ Vgs

46 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

15mm

Izcelsmes valsts

China

Produkta apraksts

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more