Tehniskie dokumenti
Specifikācija
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
112 A
Maximum Drain Source Voltage
120 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
168 W
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.45mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
10.16mm
Typical Gate Charge @ Vgs
69 nC @ 10 V
Height
15.1mm
Series
U-MOSVIII-H
Forward Diode Voltage
1.2V
Produkta apraksts
MOSFET Transistors, Toshiba
€ 7,35
€ 0,735 Katrs (Paka ir 10) (bez PVN)
€ 8,89
€ 0,889 Katrs (Paka ir 10) (Ieskaitot PVN)
10
€ 7,35
€ 0,735 Katrs (Paka ir 10) (bez PVN)
€ 8,89
€ 0,889 Katrs (Paka ir 10) (Ieskaitot PVN)
10
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
10 - 40 | € 0,735 | € 7,35 |
50 - 90 | € 0,661 | € 6,61 |
100+ | € 0,615 | € 6,15 |
Tehniskie dokumenti
Specifikācija
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
112 A
Maximum Drain Source Voltage
120 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
168 W
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.45mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
10.16mm
Typical Gate Charge @ Vgs
69 nC @ 10 V
Height
15.1mm
Series
U-MOSVIII-H
Forward Diode Voltage
1.2V
Produkta apraksts