Toshiba TK N-Channel MOSFET, 60 A, 60 V, 3-Pin TO-220SIS TK40A06N1,S4X(S

RS noliktavas nr.: 896-2375Ražotājs: ToshibaRažotāja kods: TK40A06N1,S4X(S
brand-logo
Skatīt visu MOSFET tranzistori

Tehniskie dokumenti

Specifikācija

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

60 V

Series

TK

Package Type

TO-220SIS

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

10.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

30 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.5mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10mm

Typical Gate Charge @ Vgs

23 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

15mm

Izcelsmes valsts

China

Produkta apraksts

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Noliktavas stāvoklis patreiz nav pieejams

€ 5,92

€ 0,592 Katrs (Paka ir 10) (bez PVN)

€ 7,16

€ 0,716 Katrs (Paka ir 10) (Ieskaitot PVN)

Toshiba TK N-Channel MOSFET, 60 A, 60 V, 3-Pin TO-220SIS TK40A06N1,S4X(S

€ 5,92

€ 0,592 Katrs (Paka ir 10) (bez PVN)

€ 7,16

€ 0,716 Katrs (Paka ir 10) (Ieskaitot PVN)

Toshiba TK N-Channel MOSFET, 60 A, 60 V, 3-Pin TO-220SIS TK40A06N1,S4X(S
Noliktavas stāvoklis patreiz nav pieejams

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

DaudzumsVienības cenaPer Iepakojums
10 - 40€ 0,592€ 5,92
50 - 90€ 0,384€ 3,84
100 - 240€ 0,376€ 3,76
250 - 490€ 0,364€ 3,64
500+€ 0,356€ 3,56

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

60 V

Series

TK

Package Type

TO-220SIS

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

10.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

30 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.5mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10mm

Typical Gate Charge @ Vgs

23 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

15mm

Izcelsmes valsts

China

Produkta apraksts

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more