Tehniskie dokumenti
Specifikācija
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
600 V
Series
TK
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
155 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
165 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
5.02mm
Transistor Material
Si
Number of Elements per Chip
1
Length
15.94mm
Typical Gate Charge @ Vgs
48 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
20.95mm
Izcelsmes valsts
China
Produkta apraksts
MOSFET N-Channel, TK2x Series, Toshiba
MOSFET Transistors, Toshiba
€ 84,00
€ 4,20 Katrs (tiek piegadats lepakojuma) (bez PVN)
€ 101,64
€ 5,082 Katrs (tiek piegadats lepakojuma) (Ieskaitot PVN)
Industriālais iepakojums (Maiss)
20
€ 84,00
€ 4,20 Katrs (tiek piegadats lepakojuma) (bez PVN)
€ 101,64
€ 5,082 Katrs (tiek piegadats lepakojuma) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
Industriālais iepakojums (Maiss)
20
Noliktavas stāvoklis patreiz nav pieejams
Daudzums | Vienības cena | Per Maiss |
---|---|---|
20 - 38 | € 4,20 | € 8,40 |
40 - 72 | € 3,70 | € 7,40 |
74 - 148 | € 3,50 | € 7,00 |
150+ | € 3,40 | € 6,80 |
Tehniskie dokumenti
Specifikācija
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
600 V
Series
TK
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
155 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
165 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
5.02mm
Transistor Material
Si
Number of Elements per Chip
1
Length
15.94mm
Typical Gate Charge @ Vgs
48 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
20.95mm
Izcelsmes valsts
China
Produkta apraksts