Toshiba TK N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-247 TK20N60W,S1VF(S

RS noliktavas nr.: 827-6167PRažotājs: ToshibaRažotāja kods: TK20N60W,S1VF(S
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Tehniskie dokumenti

Specifikācija

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

600 V

Series

TK

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

155 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Maximum Power Dissipation

165 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Length

15.94mm

Typical Gate Charge @ Vgs

48 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

5.02mm

Transistor Material

Si

Height

20.95mm

Izcelsmes valsts

China

Produkta apraksts

MOSFET N-Channel, TK2x Series, Toshiba

MOSFET Transistors, Toshiba

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Noliktavas stāvoklis patreiz nav pieejams

€ 82,00

€ 4,10 Katrs (tiek piegadats lepakojuma) (bez PVN)

€ 99,22

€ 4,961 Katrs (tiek piegadats lepakojuma) (Ieskaitot PVN)

Toshiba TK N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-247 TK20N60W,S1VF(S
Izvēlēties iepakojuma veidu

€ 82,00

€ 4,10 Katrs (tiek piegadats lepakojuma) (bez PVN)

€ 99,22

€ 4,961 Katrs (tiek piegadats lepakojuma) (Ieskaitot PVN)

Toshiba TK N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-247 TK20N60W,S1VF(S
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

DaudzumsVienības cenaPer Maiss
20 - 38€ 4,10€ 8,20
40 - 72€ 3,60€ 7,20
74 - 148€ 3,40€ 6,80
150+€ 3,30€ 6,60

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

600 V

Series

TK

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

155 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Maximum Power Dissipation

165 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Length

15.94mm

Typical Gate Charge @ Vgs

48 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

5.02mm

Transistor Material

Si

Height

20.95mm

Izcelsmes valsts

China

Produkta apraksts

MOSFET N-Channel, TK2x Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more