Tehniskie dokumenti
Specifikācija
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
600 V
Series
TK
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
155 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
165 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Length
15.94mm
Typical Gate Charge @ Vgs
48 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
5.02mm
Transistor Material
Si
Height
20.95mm
Izcelsmes valsts
China
Produkta apraksts
MOSFET N-Channel, TK2x Series, Toshiba
MOSFET Transistors, Toshiba
€ 82,00
€ 4,10 Katrs (tiek piegadats lepakojuma) (bez PVN)
€ 99,22
€ 4,961 Katrs (tiek piegadats lepakojuma) (Ieskaitot PVN)
Industriālais iepakojums (Maiss)
20
€ 82,00
€ 4,10 Katrs (tiek piegadats lepakojuma) (bez PVN)
€ 99,22
€ 4,961 Katrs (tiek piegadats lepakojuma) (Ieskaitot PVN)
Industriālais iepakojums (Maiss)
20
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Daudzums | Vienības cena | Per Maiss |
---|---|---|
20 - 38 | € 4,10 | € 8,20 |
40 - 72 | € 3,60 | € 7,20 |
74 - 148 | € 3,40 | € 6,80 |
150+ | € 3,30 | € 6,60 |
Tehniskie dokumenti
Specifikācija
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
600 V
Series
TK
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
155 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
165 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Length
15.94mm
Typical Gate Charge @ Vgs
48 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
5.02mm
Transistor Material
Si
Height
20.95mm
Izcelsmes valsts
China
Produkta apraksts