Tehniskie dokumenti
Specifikācija
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
11.5 A
Maximum Drain Source Voltage
600 V
Series
TK
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
340 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
100 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Width
6.1mm
Length
6.6mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Height
2.3mm
Izcelsmes valsts
China
Produkta apraksts
MOSFET Transistors, Toshiba
€ 2 800,00
€ 1,40 Katrs (Rulli ir 2000) (bez PVN)
€ 3 388,00
€ 1,694 Katrs (Rulli ir 2000) (Ieskaitot PVN)
2000
€ 2 800,00
€ 1,40 Katrs (Rulli ir 2000) (bez PVN)
€ 3 388,00
€ 1,694 Katrs (Rulli ir 2000) (Ieskaitot PVN)
2000
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Tehniskie dokumenti
Specifikācija
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
11.5 A
Maximum Drain Source Voltage
600 V
Series
TK
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
340 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
100 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Width
6.1mm
Length
6.6mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Height
2.3mm
Izcelsmes valsts
China
Produkta apraksts