Toshiba TK N-Channel MOSFET, 11.5 A, 600 V, 3-Pin DPAK TK12P60W,RVQ(S

RS noliktavas nr.: 173-2857Ražotājs: ToshibaRažotāja kods: TK12P60W,RVQ(S
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Tehniskie dokumenti

Specifikācija

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

11.5 A

Maximum Drain Source Voltage

600 V

Series

TK

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

340 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Maximum Power Dissipation

100 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Width

6.1mm

Length

6.6mm

Typical Gate Charge @ Vgs

25 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Height

2.3mm

Izcelsmes valsts

China

Produkta apraksts

MOSFET Transistors, Toshiba

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Noliktavas stāvoklis patreiz nav pieejams

€ 2 800,00

€ 1,40 Katrs (Rulli ir 2000) (bez PVN)

€ 3 388,00

€ 1,694 Katrs (Rulli ir 2000) (Ieskaitot PVN)

Toshiba TK N-Channel MOSFET, 11.5 A, 600 V, 3-Pin DPAK TK12P60W,RVQ(S

€ 2 800,00

€ 1,40 Katrs (Rulli ir 2000) (bez PVN)

€ 3 388,00

€ 1,694 Katrs (Rulli ir 2000) (Ieskaitot PVN)

Toshiba TK N-Channel MOSFET, 11.5 A, 600 V, 3-Pin DPAK TK12P60W,RVQ(S
Noliktavas stāvoklis patreiz nav pieejams

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

11.5 A

Maximum Drain Source Voltage

600 V

Series

TK

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

340 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Maximum Power Dissipation

100 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Width

6.1mm

Length

6.6mm

Typical Gate Charge @ Vgs

25 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Height

2.3mm

Izcelsmes valsts

China

Produkta apraksts

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more