Toshiba TK N-Channel MOSFET, 207 A, 100 V, 3-Pin TO-220 TK100E10N1
Tehniskie dokumenti
Specifikācija
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
207 A
Maximum Drain Source Voltage
100 V
Series
TK
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
255 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
4.45mm
Length
10.16mm
Typical Gate Charge @ Vgs
140 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Height
15.1mm
Izcelsmes valsts
Japan
Produkta apraksts
MOSFET Transistors, Toshiba
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€ 90,00
€ 1,80 Katrs (Tubina ir 50) (bez PVN)
€ 108,90
€ 2,178 Katrs (Tubina ir 50) (Ieskaitot PVN)
50
€ 90,00
€ 1,80 Katrs (Tubina ir 50) (bez PVN)
€ 108,90
€ 2,178 Katrs (Tubina ir 50) (Ieskaitot PVN)
50
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Lūdzu pārbaudiet vēlreiz vēlāk
Ideate. Create. Collaborate
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Tehniskie dokumenti
Specifikācija
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
207 A
Maximum Drain Source Voltage
100 V
Series
TK
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
255 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
4.45mm
Length
10.16mm
Typical Gate Charge @ Vgs
140 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Height
15.1mm
Izcelsmes valsts
Japan
Produkta apraksts
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products