Tehniskie dokumenti
Specifikācija
Brand
ToshibaMaximum Continuous Collector Current
40 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±25V
Maximum Power Dissipation
230 W
Package Type
TO-3P
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
2.5MHz
Transistor Configuration
Single
Dimensions
15.5 x 4.5 x 20mm
Gate Capacitance
1500pF
Maximum Operating Temperature
175 °C
Energy Rating
0.29mJ
Izcelsmes valsts
Japan
Produkta apraksts
IGBT Discretes, Toshiba
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
€ 4,50
€ 4,50 Katrs (bez PVN)
€ 5,44
€ 5,44 Katrs (Ieskaitot PVN)
1
€ 4,50
€ 4,50 Katrs (bez PVN)
€ 5,44
€ 5,44 Katrs (Ieskaitot PVN)
1
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Tehniskie dokumenti
Specifikācija
Brand
ToshibaMaximum Continuous Collector Current
40 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±25V
Maximum Power Dissipation
230 W
Package Type
TO-3P
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
2.5MHz
Transistor Configuration
Single
Dimensions
15.5 x 4.5 x 20mm
Gate Capacitance
1500pF
Maximum Operating Temperature
175 °C
Energy Rating
0.29mJ
Izcelsmes valsts
Japan
Produkta apraksts
IGBT Discretes, Toshiba
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.