Tehniskie dokumenti
Specifikācija
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
204 A
Maximum Drain Source Voltage
40 V
Series
NexFET
Package Type
VSON-CLIP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
3.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
3.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.1mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.1mm
Typical Gate Charge @ Vgs
25 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
1.05mm
Minimum Operating Temperature
-55 °C
Produkta apraksts
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
€ 11,75
€ 2,35 Katrs (Paka ir 5) (bez PVN)
€ 14,22
€ 2,844 Katrs (Paka ir 5) (Ieskaitot PVN)
Standarts
5
€ 11,75
€ 2,35 Katrs (Paka ir 5) (bez PVN)
€ 14,22
€ 2,844 Katrs (Paka ir 5) (Ieskaitot PVN)
Standarts
5
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
5 - 20 | € 2,35 | € 11,75 |
25 - 45 | € 2,25 | € 11,25 |
50 - 120 | € 2,00 | € 10,00 |
125 - 245 | € 1,80 | € 9,00 |
250+ | € 1,70 | € 8,50 |
Tehniskie dokumenti
Specifikācija
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
204 A
Maximum Drain Source Voltage
40 V
Series
NexFET
Package Type
VSON-CLIP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
3.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
3.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.1mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.1mm
Typical Gate Charge @ Vgs
25 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
1.05mm
Minimum Operating Temperature
-55 °C
Produkta apraksts