Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
3 A
Maximum Collector Emitter Voltage
100 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Collector Base Voltage
100 V
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
9.15 x 10.4 x 4.6mm
Maximum Operating Temperature
+150 °C
Izcelsmes valsts
China
Produkta apraksts
NPN Power Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
€ 2,26
€ 0,452 Katrs (Paka ir 5) (bez PVN)
€ 2,73
€ 0,547 Katrs (Paka ir 5) (Ieskaitot PVN)
5
€ 2,26
€ 0,452 Katrs (Paka ir 5) (bez PVN)
€ 2,73
€ 0,547 Katrs (Paka ir 5) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
5
Noliktavas stāvoklis patreiz nav pieejams
| Daudzums | Vienības cena | Per Iepakojums |
|---|---|---|
| 5 - 5 | € 0,452 | € 2,26 |
| 10 - 95 | € 0,373 | € 1,86 |
| 100 - 495 | € 0,26 | € 1,30 |
| 500 - 995 | € 0,226 | € 1,13 |
| 1000+ | € 0,221 | € 1,10 |
Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
3 A
Maximum Collector Emitter Voltage
100 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Collector Base Voltage
100 V
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
9.15 x 10.4 x 4.6mm
Maximum Operating Temperature
+150 °C
Izcelsmes valsts
China
Produkta apraksts
NPN Power Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.


