Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
1 A
Maximum Collector Emitter Voltage
60 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
30 W
Minimum DC Current Gain
15
Transistor Configuration
Single
Maximum Collector Base Voltage
60 V
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
10.4 x 4.6 x 15.75mm
Produkta apraksts
NPN Power Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
€ 41,50
Katrs (tiek piegadats Tubina) (bez PVN)
€ 50,22
Katrs (tiek piegadats Tubina) (Ieskaitot PVN)
Industriālais iepakojums (Penālis)
100
€ 41,50
Katrs (tiek piegadats Tubina) (bez PVN)
€ 50,22
Katrs (tiek piegadats Tubina) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
Industriālais iepakojums (Penālis)
100
Noliktavas stāvoklis patreiz nav pieejams
Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
1 A
Maximum Collector Emitter Voltage
60 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
30 W
Minimum DC Current Gain
15
Transistor Configuration
Single
Maximum Collector Base Voltage
60 V
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
10.4 x 4.6 x 15.75mm
Produkta apraksts
NPN Power Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.