Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
1500 V
Series
MDmesh
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
320 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Length
15.75mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
89.3 nC @ 10 V
Width
5.15mm
Minimum Operating Temperature
-55 °C
Height
20.15mm
Produkta apraksts
N-Channel MDmesh™, 800V/1500V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
€ 8,80
€ 8,80 Katrs (bez PVN)
€ 10,65
€ 10,65 Katrs (Ieskaitot PVN)
Standarts
1
€ 8,80
€ 8,80 Katrs (bez PVN)
€ 10,65
€ 10,65 Katrs (Ieskaitot PVN)
Standarts
1
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
1500 V
Series
MDmesh
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
320 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Length
15.75mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
89.3 nC @ 10 V
Width
5.15mm
Minimum Operating Temperature
-55 °C
Height
20.15mm
Produkta apraksts