STMicroelectronics MDmesh M2 N-Channel MOSFET, 52 A, 650 V, 3-Pin TO-247 STW56N60M2

RS noliktavas nr.: 876-5720Ražotājs: STMicroelectronicsRažotāja kods: STW56N60M2
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Specifikācija

Channel Type

N

Maximum Continuous Drain Current

52 A

Maximum Drain Source Voltage

650 V

Series

MDmesh M2

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

55 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

350 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Number of Elements per Chip

1

Length

15.75mm

Typical Gate Charge @ Vgs

91 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Width

5.15mm

Forward Diode Voltage

1.6V

Height

20.15mm

Izcelsmes valsts

China

Produkta apraksts

N-channel MDmesh™ M2 Series, STMicroelectronics

A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).

MOSFET Transistors, STMicroelectronics

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Noliktavas stāvoklis patreiz nav pieejams

€ 6,50

€ 6,50 Katrs (bez PVN)

€ 7,86

€ 7,86 Katrs (Ieskaitot PVN)

STMicroelectronics MDmesh M2 N-Channel MOSFET, 52 A, 650 V, 3-Pin TO-247 STW56N60M2
Izvēlēties iepakojuma veidu

€ 6,50

€ 6,50 Katrs (bez PVN)

€ 7,86

€ 7,86 Katrs (Ieskaitot PVN)

STMicroelectronics MDmesh M2 N-Channel MOSFET, 52 A, 650 V, 3-Pin TO-247 STW56N60M2
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

52 A

Maximum Drain Source Voltage

650 V

Series

MDmesh M2

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

55 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

350 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Number of Elements per Chip

1

Length

15.75mm

Typical Gate Charge @ Vgs

91 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Width

5.15mm

Forward Diode Voltage

1.6V

Height

20.15mm

Izcelsmes valsts

China

Produkta apraksts

N-channel MDmesh™ M2 Series, STMicroelectronics

A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more