STMicroelectronics ST SiC N-Channel MOSFET Module, 39 A, 600 V Depletion, 4-Pin TO-247-4 STW48N60M6-4

RS noliktavas nr.: 202-5543Ražotājs: STMicroelectronicsRažotāja kods: STW48N60M6-4
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Specifikācija

Channel Type

N

Maximum Continuous Drain Current

39 A

Maximum Drain Source Voltage

600 V

Series

ST

Package Type

TO-247-4

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

0.061 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

4.75V

Number of Elements per Chip

1

Transistor Material

SiC

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Noliktavas stāvoklis patreiz nav pieejams

€ 11,80

€ 5,90 Katrs (Paka ir 2) (bez PVN)

€ 14,28

€ 7,139 Katrs (Paka ir 2) (Ieskaitot PVN)

STMicroelectronics ST SiC N-Channel MOSFET Module, 39 A, 600 V Depletion, 4-Pin TO-247-4 STW48N60M6-4
Izvēlēties iepakojuma veidu

€ 11,80

€ 5,90 Katrs (Paka ir 2) (bez PVN)

€ 14,28

€ 7,139 Katrs (Paka ir 2) (Ieskaitot PVN)

STMicroelectronics ST SiC N-Channel MOSFET Module, 39 A, 600 V Depletion, 4-Pin TO-247-4 STW48N60M6-4
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Ideate. Create. Collaborate

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design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

39 A

Maximum Drain Source Voltage

600 V

Series

ST

Package Type

TO-247-4

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

0.061 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

4.75V

Number of Elements per Chip

1

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more